Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review

被引：73

作者：

Guo, Xiaorui ^{[1
]}

Xun, Qian ^{[2
]}

Li, Zuxin ^{[1
]}

Du, Shuxin ^{[1
]}

机构：

[1] Huzhou Univ, Sch Engn, Erhuan Rd 759, Huzhou, Peoples R China

[2] Chalmers Univ Technol, Dept Elect Engn, S-313000 Gothenburg, Sweden

来源：

MICROMACHINES | 2019年 / 10卷 / 06期

基金：

中国国家自然科学基金;

关键词：

power electronics; high-temperature converters; MEMS devices; SiC power electronic devices; AIR COOLING SYSTEM; GATE DRIVER; INTEGRATED-CIRCUIT; DESIGN CONSIDERATIONS; DIE ATTACH; PHASE; INVERTER; MODULE; ENVIRONMENT; TECHNOLOGY;

D O I：

10.3390/mi10060406

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The significant advance of power electronics in today's market is calling for high-performance power conversion systems and MEMS devices that can operate reliably in harsh environments, such as high working temperature. Silicon-carbide (SiC) power electronic devices are featured by the high junction temperature, low power losses, and excellent thermal stability, and thus are attractive to converters and MEMS devices applied in a high-temperature environment. This paper conducts an overview of high-temperature power electronics, with a focus on high-temperature converters and MEMS devices. The critical components, namely SiC power devices and modules, gate drives, and passive components, are introduced and comparatively analyzed regarding composition material, physical structure, and packaging technology. Then, the research and development directions of SiC-based high-temperature converters in the fields of motor drives, rectifier units, DC-DC converters are discussed, as well as MEMS devices. Finally, the existing technical challenges facing high-temperature power electronics are identified, including gate drives, current measurement, parameters matching between each component, and packaging technology.

引用

页数：26

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