Inverse Doping Profile of MOSFETs via Geometric Programming

被引：0
|
作者：
Li, Yiming [1 ]
Chen, Ying-Chieh [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
来源：
SCIENTIFIC COMPUTING IN ELECTRICAL ENGINEERING (SCEE 2010) | 2012年 / 16卷
关键词：
D O I：
10.1007/978-3-642-22453-9__37
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, we optimize one-dimensional doping profiles between the interface of semiconductor and oxide to the substrate in metal-oxide-semiconductor field-effect transistors (MOSFETs). For a set of given current-voltage curves, the problem is modelled as a geometric programming (GP) problem. The MOSFET's DC characteristics including the on-and off-state currents are simultaneously derived as functions of the doping profile in the GP problem.
引用
收藏
页码：347 / 355
页数：9
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