Non-linear excitation and correlation studies of single InGaN quantum dots

被引:0
|
作者
Collins, Daniel P. [1 ]
Jarjour, Anas F. [1 ]
Taylor, Robert A. [1 ]
Hadjipanayi, Maria [1 ]
Oliver, Rachel A. [2 ]
Kappers, Menno J. [2 ]
Humphreys, Colin J. [2 ]
Tahraoui, Abbes [2 ,3 ]
机构
[1] Univ Oxford, Dept Phys, Clarendon Lab, Parks Rd, Oxford OX1 3PU, England
[2] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England
[3] Univ Sheffield, Natl Ctr Technol 3 5, Dept Elect & Elect Engn, Sheffield, S Yorkshire S1 3JD, England
基金
英国工程与自然科学研究理事会;
关键词
2-PHOTON ABSORPTION;
D O I
10.1002/pssc.200880632
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The exact mechanism for non-linear sub-bandgap excitation of single InGaN quantum dots (QDs) has been investigated using interferometric autocorrelation techniques based around a near-infrared (NIR) excitation laser. We identify unambiguously the heavily favoured two-photon absorption (TPA) as being crucial in the observed background reduction for such Nitride structures and compare systematically the relative merits of both the linear (blue) and non-linear (NIR) excitation regimes on several apertures of a masked sample. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:864 / +
页数:2
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