A GSM/EDGE dual-mode, 900/1800/1900-MHz triple-band HBT MMIC power amplifier module

被引：11

作者：

Yamamoto, K ^{[1
]}

Asada, T ^{[1
]}

Suzuki, S ^{[1
]}

Miura, T ^{[1
]}

Inoue, A ^{[1
]}

Miyakuni, S ^{[1
]}

Otsuji, J ^{[1
]}

Hattori, R ^{[1
]}

Miyazaki, Y ^{[1
]}

Shimura, T ^{[1
]}

机构：

[1] Mitsubishi Electr Corp, High Frequency & Opt Semicond Div, Itami, Hyogo 6648641, Japan

来源：

2002 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2002年

关键词：

D O I：

10.1109/RFIC.2002.1012041

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a 3.5-V operation HBT MMIC power amplifier module for use in GSM/EDGE dual-mode, 900/1800/1900-MHz triple band handset applications. With diode switches and a band select switch built on the MMIC, the module delivers a P-out of 35.5 dBm and a PAE of about 50% for GSM900, a 33.4-dBm P-out and a 45% PAE for GSM1800/1900. While satisfying an error vector magnitude (EVM) of less than 4% and a receive-band noise power of less than -83 dBm/100 kHz, the module also delivers a 29.5 dBm P-out and a PAE of over 25% for EDGE900, a 28.5 dBm P-out and a PAE of over 25% for EDGE1800/1900.

引用

页码：245 / 248

页数：4

共 12 条

[1] A GSM/EDGE dual-mode, triple-band InGaPHBT MMIC power amplifier module
Shimura, T
Asada, T
Suzuki, S
Miura, T
Otsuji, J
Hattori, R
Miyazaki, Y
Yamamoto, K
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IEICE TRANSACTIONS ON ELECTRONICS, 2005, E88C (07): : 1495 - 1501
[2] A 900-MHZ-BAND HBT MMIC POWER-AMPLIFIER MODULE
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SAKUNO, K
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SHARP TECHNICAL JOURNAL, 1994, (60): : 41 - 44
[3] A 900/1900-MHz Band-Switchable CMOS Power Amplifier
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[4] A 3.2-V operation single-chip AlGaAs GaAs HBT MMIC power amplifier for GSM900/1800 dual-band applications
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1999 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4, 1999, : 1397 - 1400
[5] Linearized high efficient HBT MMIC dual band power amplifier module for L-band applications
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IEICE TRANSACTIONS ON ELECTRONICS, 1999, E82C (11): : 1913 - 1920
[7] A 900/1500/2000-MHz triple-band reconfigurable power amplifier employing RF-MEMS switches
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[9] Novel 900 MHz/1.9 GHz dual-mode power amplifier employing MEMS switches for optimum matching
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[10] Dual-band multi-mode power amplifier module using a third generation HBT technology
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