Investigation on the impedance spectroscopy and electrical conduction mechanism in SrTi1-xVxO3 (x=0.00x0.15) ceramics

被引:0
|
作者
Mantry, Snigdha Paramita [1 ]
Sarun, P. M. [1 ]
机构
[1] Indian Inst Technol, Indian Sch Mines, Funct Ceram Lab, Dept Appl Phys, Dhanbad 826004, Bihar, India
关键词
DIELECTRIC-RELAXATION; DEFECT CHEMISTRY; DOPED SRTIO3; MICROSTRUCTURE; TEMPERATURE; TRANSITION; TRANSPORT; MODULUS; MG;
D O I
10.1007/s10854-019-00991-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work, vanadium doped SrTiO 3 (SrTi 1-x V x O 3, x = 0.00 = x = 0.15) ceramics are prepared via solid state reaction method. All the prepared samples are characterized by X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). The Rietveld refinement performed on the XRD pattern confirms the cubic crystalline structure with Pm3m space group for all the samples. The grain size significantly increases by vanadium doping. The Nyquist analysis, conductivity behavior and scaling behavior of the electrical impedance (Z / Z max) and modulus (M / M max) of SrTi 1-x V x O 3 ceramics are investigated at different temperatures (400-500. C) over a wide range of frequency (100 Hz-5 MHz). The results of Nyquist plots reveal that the electrical behavior of SrTi 1-x V x O 3 ceramics are due to the contribution of both the grain and grain boundary. The negative temperature of coefficient of resistance (NTCR) behavior is also confirmed in all the investigated samples. Modulus analysis confirms that the relaxation process occurring in all the samples are of non-Debye type. The observed relaxation frequencies follow the Arrehenius equation. Activation energies are calculated for all the samples which indicate that the phenomena of electrical transport is a thermally activated process.
引用
收藏
页码:6795 / 6805
页数:11
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