Validation Analysis and Test of Semiconductor Device Simulator GSRES

被引：0

作者：

Li, Yong ^{[1
]}

Ding, Gong ^{[1
]}

Xie, Haiyan ^{[1
]}

Xuan, Chun ^{[1
]}

Xia, Hong-Fu ^{[1
]}

Wang, Jian-Guo ^{[1
,2
]}

机构：

[1] Northwest Inst Nucl Technol, Xian 710024, Peoples R China

[2] Xi An Jiao Tong Univ, Sch Elect & Informat Engn, Xian 710049, Peoples R China

来源：

PIERS 2014 GUANGZHOU: PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM | 2014年

基金：

美国国家科学基金会;

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Basic drift-diffusion model (DDM) of carriers in semiconductor using in a numerical simulator: General Semiconductor Radiation Effect Simulator (GSRES), is studied in order to identify and reduce the numerical errors of this semiconductor simulator. Numerical approximations of the semiconductor device EMP effect simulator is analysed. Numerical errors caused by approximation of the field distribution of lattice temperature, and approximation the of the recombination rate and generation rate are studied. Application range of this simulator is analysed according to the numerical errors caused by these approximations. Terms of the simulator that should be improved and enhanced precision are given.

引用

页码：1006 / 1011

页数：6

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