Evolution of the sensitized Er3+ emission by silicon nanoclusters and luminescence centers in silicon-rich silica

被引：6
|
作者：
Xu, Lingbo
Li, Dongsheng [1 ]
Jin, Lu
Xiang, Luelue
Wang, Feng
Yang, Deren
Que, Duanlin
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
来源：
NANOSCALE RESEARCH LETTERS | 2014年 / 9卷
基金：
中国国家自然科学基金;
关键词：
Luminescence centers; Silicon nanoclusters; Erbium; Energy transfer; Silicon-rich oxide; Photoluminescence; 1.54; MU-M; OPTICAL GAIN; SI NANOCRYSTALS; ENERGY-TRANSFER; DOPED SILICA; IONS; ELECTROLUMINESCENCE; PHOTOLUMINESCENCE; FILMS; SPECTROSCOPY;
D O I：
10.1186/1556-276X-9-456
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The structural and optical properties of erbium-doped silicon-rich silica samples containing different Si concentrations are studied. Intense photoluminescence (PL) from luminescence centers (LCs) and silicon nanoclusters (Si NCs), which evolves with annealing temperatures, is obtained. By modulating the silicon concentrations in samples, the main sensitizers of Er3+ ions can be tuned from Si NCs to LCs. Optimum Er3+ PL, with an enhancement of more than two, is obtained in the samples with a medium Si concentration, where the sensitization from Si NCs and LCs coexists.
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页数：6
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