High performance and stable perovskite solar cells using vanadic oxide as a dopant for spiro-OMeTAD

被引:83
|
作者
Wang, Xiaobing [1 ]
Wu, Jihuai [1 ]
Yang, Yuqian [1 ]
Liu, Xuping [1 ]
Guo, Qiyao [1 ]
Song, Zeyu [1 ]
Li, Guodong [1 ]
Lan, Zhang [1 ]
Huang, Miaoliang [1 ]
机构
[1] Huaqiao Univ, Engn Res Ctr Environm Friendly Funct Mat, Minist Educ, Fujian Engn Res Ctr Green Funct Mat, Xiamen 361021, Fujian, Peoples R China
基金
中国国家自然科学基金;
关键词
ORGANOMETAL TRIHALIDE PEROVSKITE; HOLE-TRANSPORTING MATERIALS; P-TYPE DOPANT; CHARGE-TRANSPORT; ION MIGRATION; LOW-COST; EFFICIENT; ELECTRON; LENGTHS; IMPACT;
D O I
10.1039/c9ta03351c
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Spiro-OMeTAD as a hole-transport material (HTM) plays a crucial role in the photovoltaic performance and stability of perovskite solar cells (PSCs). However, the inferior conductivity and mediocre hole-mobility of unoxidized spiro-OMeTAD limit its function. In order to improve the functional properties of HTMs, we develop a new kind of dopant, vanadic oxide (V2O5) in place of the traditional oxygen in the presence of a lithium salt. V2O5 with strong redox potential can rapidly oxidize spiro-OMeTAD, which effectively improves the hole-transport properties and adjusts the energy level of the HTM. Consequently, the champion PSC based on the V2O5-doped HTM achieves a power conversion efficiency of 20.5%, while the device without V2O5 doping exhibits an efficiency of 18.1% under the same test conditions. Meanwhile, owing to the reduction of trap state density and the band gap adjustment by V2O5 doping the hysteresis of devices is effectively suppressed and the stability is improved. The facile and inexpensive treatment and obvious performance improvement render the present finding very promising.
引用
收藏
页码:13256 / 13264
页数:9
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