METALLIZATION BY Ti-Cu SYSTEM OF AlSiC METAL MATRIX COMPOSITE

One of the conditions for the reliability of a semiconductor device is a high-quality metallization of the surface of the device body, for mounting the crystal on it. There are several technologies for metallizing a metal matrix composite based on aluminum and silicon carbide using chemical and galvanic deposition of Nickel, but these technologies do not provide high-quality adhesion of the metallization layer to the surface of the metal matrix composite, which makes it difficult to install a semiconductor crystal. The article presents the results of the development of a technology for metallization of the body of a semiconductor device made of a metal matrix composite based on aluminum and silicon carbide, using vacuum deposition of titanium and copper. This technology is used in the manufacture of metal matrix composite housings for subsequent installation of crystals based on wide-band materials. Samples of heat sinks with a base made of a 4 mm thick aluminum-silicon carbide metal matrix composite containing 70% silicon carbide particles were collected. The surface of the samples was covered with a vacuum-deposited titanium-copper metallization system based on the fact that a chemical reaction between the deposited metal and the dielectric material takes place, if it is possible from the point of view of thermodynamics. Studies of the deposition temperature regime were carried out, as a result of which the thermal deposition regime of 300 degrees C was selected. The quality of the resulting coating was studied using electron microscopy on the coated samples, as well as the soldered joint strength was checked to assess the strength of the adhesion of the metallization layer to the composite. The value of the adhesion of the metallization layer according to the developed technology ensures the installation of semiconductor crystals to the body of a semiconductor device.