Atomic structure and composition distribution in wetting layers and islands of germanium grown on silicon (001) substrates

被引：11

作者：

Brehm, Moritz ^{[1
]}

Groiss, Heiko ^{[1
,2
]}

Bauer, Guenther ^{[1
]}

Gerthsen, Dagmar ^{[2
]}

Clarke, Roy ^{[3
]}

Paltiel, Yossi ^{[4
]}

Yacoby, Yizhak ^{[5
]}

机构：

[1] Johannes Kepler Univ Linz, Inst Semicond & Solid State Phys, A-4040 Linz, Austria

[2] Karlsruhe Inst Technol, Lab Elect Microscopy, D-76128 Karlsruhe, Germany

[3] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA

[4] Hebrew Univ Jerusalem, Dept Appl Phys, IL-91904 Jerusalem, Israel

[5] Hebrew Univ Jerusalem, Racah Inst Phys, IL-91904 Jerusalem, Israel

来源：

NANOTECHNOLOGY | 2015年 / 26卷 / 48期

基金：

以色列科学基金会; 奥地利科学基金会;

关键词：

Si-Ge quantum dots; nanostructures; HRTEM; COBRA; AFM; Stranski-Krastanow; CHEMICAL-VAPOR-DEPOSITION; SELF-ORGANIZATION; DIGITAL ANALYSIS; GE ISLANDS; MBE GROWTH; DOTS; PHOTOLUMINESCENCE; NANOSTRUCTURES; GE/SI(001); SI(001);

D O I：

10.1088/0957-4484/26/48/485702

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We present a comprehensive structural investigation of the Ge wetting layer (WL) and island growth on Si(001) substrates by a combination of AFM, high resolution transmission electron microscopy and the energy-differential coherent Bragg rod analysis (COBRA) x-ray method. By considering the influence of the initial Si surface morphology on the deposited Ge, these techniques provide quantitative information on the Ge content and its distribution, in particular within the WL which plays a crucial role in the formation of epitaxial nanostructures. In the WL, the Ge content was found to be above 80% for our growth conditions. Furthermore, from the digital analysis of high-resolution transmission electron microscope images, quantitative information on the strain relaxation is obtained, which complements the COBRA analysis of the Ge distribution and content in these nanostructures.

引用

页数：11

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