MODELING MIXED-MODE DC AND RF STRESS IN SIGE HBT POWER AMPLIFIERS

被引：0

作者：

Cheng, Peng ^{[1
]}

Grens, Curtis M. ^{[1
]}

Appaswamy, Aravind ^{[1
]}

Chakraborty, Partha S. ^{[1
]}

Cressler, John D. ^{[1
]}

机构：

[1] Georgia Tech, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

PROCEEDINGS OF THE 2008 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The degradation of SiGe HBTs due to mixed-mode DC and RF stress (simultaneous application of high current and voltage) has been modeled for the first time. State-of-the-art 200 GHz SiGe HBTs were first characterized, and then DC and RF stressed. Using TCAD simulations and calculations based upon a reaction-diffusion model, the excess base current due to stress was modeled as a function of the stress current and voltage. This physics-based stress model was then designed as a sub-circuit in Cadence, and incorporated into a cascode SiGe PA design to predict the DC and RF stress-induced excess base current. Predicted degradation is in agreement with RF stress results.

引用

页码：133 / 136

页数：4

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