RF Response of PIN Photodiode with Avalanche Multiplication Using Quantum Dots

被引：0
|
作者：
Umezawa, T. [1 ]
Akahane, K. [1 ]
Kanno, A. [1 ]
Kawanishi, T. [1 ]
机构：
[1] Natl Inst Informat & Commun Technol NICT, Koganei, Tokyo 1848795, Japan
来源：
2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR) | 2013年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We fabricate a new PIN photodiode using InAs/InAlGaAs quantum dot absorption layer with an avalanche multiplication, low breakdown temperature coefficient, and high frequency response. Multiplication factors of M = 1 to M = 12 and the RF response over 10GHz are reported.
引用
收藏
页数：2
相关论文
共 50 条
  • [1] Research on dispersion compensation using avalanche photodiode and pin photodiode
    Ma, Yanxia
    Chen, Qinghui
    Wang, Shuyan
    Sharma, Shalini
    Khanna, Shaweta
    IET COLLABORATIVE INTELLIGENT MANUFACTURING, 2021, 3 (03) : 205 - 214
  • [2] RETRACTION: Research on dispersion compensation using avalanche photodiode and pin photodiode
    Ma, Y.
    Chen, Q.
    Wang, S.
    Sharma, S.
    Khanna, S.
    IET COLLABORATIVE INTELLIGENT MANUFACTURING, 2024, 6 (04)
  • [3] RESPONSE LAG OF AVALANCHE PHOTODIODE HAVING SEPARATED REGIONS OF PHOTOGENERATION AND AVALANCHE MULTIPLICATION
    KUZNETSOVA, MA
    KUZNETSOVA, EM
    SOVIET JOURNAL OF OPTICAL TECHNOLOGY, 1989, 56 (08): : 518 - 519
  • [4] OPTIMIZATION OF MULTIPLICATION FACTOR OF AVALANCHE PHOTODIODE
    NISHIDA, K
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (05) : 481 - +
  • [5] AVALANCHE BREAKDOWN AND MULTIPLICATION IN SILICON PIN JUNCTIONS
    OGAWA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (07) : 473 - &
  • [6] Hole multiplication in a reverse-type avalanche photodiode
    Sato, Mitsuhiro
    Yanagida, Takayuki
    Yoshikawa, Akira
    Yatsu, Yoichi
    Kataoka, Jun
    Saito, Fumio
    2007 IEEE NUCLEAR SCIENCE SYMPOSIUM CONFERENCE RECORD, VOLS 1-11, 2007, : 1486 - +
  • [7] Probabilistic model of the process of electron multiplication in an avalanche photodiode
    Apanasovich, V.V.
    Pashkevich, V.V.
    Journal of Communications Technology and Electronics, 1995, 40 (15): : 57 - 62
  • [8] STUDY OF FREQUENCY-RESPONSE OF MULTIPLICATION GAIN OF A 2-LAYER AVALANCHE PHOTODIODE
    PAL, BB
    ROY, SK
    PROCEEDINGS OF THE IEEE, 1974, 62 (02) : 285 - 287
  • [9] InAlAs/InGaAs avalanche photodiode with an optimized multiplication layer
    Gu Yu-Qiang
    Tan Ming
    Wu Yuan-Yuan
    Lu Jian-Ya
    Li Xue-Fei
    Lu Shu-Long
    JOURNAL OF INFRARED AND MILLIMETER WAVES, 2021, 40 (06) : 715 - 720
  • [10] Device design of planner PIN HgCdTe avalanche photodiode
    Cheng Yu-Shun
    Guo Hui-Jun
    Li Hao
    Chen Lu
    Lin Chun
    He Li
    JOURNAL OF INFRARED AND MILLIMETER WAVES, 2020, 39 (01) : 6 - 12
12345