Effect of annealing on the magnetic properties of ultrathin Co/Ge(111) films

被引:15
|
作者
Tsay, JS
Yao, YD
Wang, KC
Cheng, WC
Yang, CS
机构
[1] Tunghai Univ, Dept Phys, Taichung 407, Taiwan
[2] Acad Sinica, Inst Phys, Taipei 11529, Taiwan
[3] Natl Taiwan Univ Sci & Technol, Dept Mech Engn, Taipei 107, Taiwan
关键词
cobalt; germanium; magnetic measurements; metal-semiconductor magnetic heterostructures; Auger electron spectroscopy;
D O I
10.1016/S0039-6028(02)01292-X
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Effect of annealing on the magnetic properties of ultrathin Co/Ge(1 1 1) films has been investigated using the surface magneto-optic Kerr effect technique. As the annealing temperature increases from 200 to 450 K the Kerr intensity decreases to zero for all the samples. The temperature, where ferromagnetism vanishes, increases from below 200 to 375 K as the coverage of the cobalt film increases from 5 to 28 monolayers (ML). Corresponding compositions obtained from the Auger electron spectroscopy measurements show an intermixing of the cobalt adlayer and the Ge(1 1 1) substrate. For a 20-ML-thick Co/Ge(1 1 1) film, the intensity ratio of Co to Ge Auger signals drops to roughly half of the original value as the annealing temperature increases to 325 K, at which the hysteresis disappears. This indicates the formation of a CoGe compound at the surface layers. Cobalt films possess an in-plane anisotropy as deposited at a substrate temperature of 200 K. The magnetic easy axis retains in the Surface plane at an elevated temperature. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:498 / 501
页数:4
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