A di/dt Feedback-Based Active Gate Driver for Smart Switching and Fast Overcurrent Protection of IGBT Modules

被引:199
|
作者
Wang, Zhiqiang [1 ]
Shi, Xiaojie [1 ]
Tolbert, Leon M. [1 ]
Wang, Fei [1 ]
Blalock, Benjamin J. [1 ]
机构
[1] Univ Tennessee, Dept Elect Engn & Comp Sci, Knoxville, TN 37996 USA
基金
美国国家科学基金会;
关键词
Active gate driver (AGD); IGBT modules; Miller plateau; overcurrent protection; short circuit; SHORT-CIRCUIT PROTECTION; FAULT PROTECTION; PERFORMANCE; BEHAVIOR; DV/DT;
D O I
10.1109/TPEL.2013.2278794
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents an active gate driver (AGD) for IGBT modules to improve their overall performance under normal condition as well as fault condition. Specifically, during normal switching transients, a di/dt feedback controlled current source and current sink is introduced together with a push-pull buffer for dynamic gate current control. Compared to a conventional gate drive strategy, the proposed one has the capability of reducing the switching loss, delay time, and Miller plateau duration during turn-on and turn-off transient without sacrificing current and voltage stress. Under overcurrent condition, it provides a fast protection function for IGBT modules based on the evaluation of fault current level through the di/dt feedback signal. Moreover, the AGD features flexible protection modes, which overcomes the interruption of converter operation in the event of momentary short circuits. A step-down converter is built to evaluate the performance of the proposed driving schemes under various conditions, considering variation of turn-on/off gate resistance, current levels, and short-circuit fault types. Experimental results and detailed analysis are presented to verify the feasibility of the proposed approach.
引用
收藏
页码:3720 / 3732
页数:13
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