Determination of Critical Parameters of Some Models of Binary Gibbs Random Fields Based on Image Modeling

被引：0
|
作者：
Zaitseva, Anna Yu [1 ]
Denisenko, Irina A. [2 ]
Vasyukov, Vasily N. [3 ,4 ]
机构：
[1] Novosibirsk State Tech Univ, Fdn Informat Sci Program, Novosibirsk, Russia
[2] Novosibirsk State Tech Univ, Fac Radio Engn & Elect, Novosibirsk, Russia
[3] Novosibirsk State Tech Univ, Dept Sci Res, Novosibirsk, Russia
[4] Novosibirsk State Tech Univ, Dept Theoret Fundamentals Radio Engn, Novosibirsk, Russia
来源：
2019 20TH INTERNATIONAL CONFERENCE OF YOUNG SPECIALISTS ON MICRO/NANOTECHNOLOGIES AND ELECTRON DEVICES (EDM 2019) | 2019年
关键词：
Gibbs random field; Gibbs probability distribution; phase transition; critical inverse temperature; Ising model;
D O I：
10.1109/edm.2019.8823156
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Parameters of the texture images described by binary Gibbs random fields when phase transition occurs are investigated. Ising model and its generalizations are considered. The phenomenon of phase transition in a model of a binary field with vertical, horizontal and diagonal cliques is evaluated.
引用
收藏
页码：61 / 64
页数：4
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