The importance of recombination via excited states in InAs/GaAs 1.3μm quantum dot lasers

被引：0
|
作者：
Crowley, M. T. [1 ]
Marko, I. P. [2 ]
Masse, N. F. [2 ]
Andreev, A. D. [2 ]
Sweeney, S. J. [2 ]
O'Reilly, E. P. [1 ,3 ]
Adams, A. R. [2 ]
机构：
[1] Tyndall Natl Inst, Photon Theory Grp, Cork, Ireland
[2] Univ Surrey, Adv Tech Inst, Surrey GU2 7XH, England
[3] Univ Coll Park, Dept Phys, Cork, Ireland
来源：
2008 IEEE 21ST INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE | 2008年
关键词：
D O I：
10.1109/ISLC.2008.4636037
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The optical matrix element for excited-states is significantly weaker than the ground-state leading to thermally stable radiative recombination. This is not so for non-radiative Auger recombination, causing a sharp increase in threshold current with temperature.
引用
收藏
页码：117 / +
页数：2
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