A Datasheet-Based Behavioral Model of SiC MOSFET for Power Loss Prediction in Electromagnetic Transient Simulation

In this paper, a simulation method for power loss prediction of Silicon Carbide (SiC) MOSFET in power electronic system is presented. A datasheet-based behavioral model of MOSFETs with body diode is proposed and developed in order to accurately represent both the dynamic characteristics of MOSFETs and the reverse recovery behavior of body diode. The parameters extraction procedure from the device datasheet using curve fitting and empirical formula is also discussed. Based on the simulated switching waveforms, an Analytical Power Loss Model (APLM) is further studied correspondingly which identifies the switching waveform subintervals and develops the analytical equations to replicate the loss behavior of semiconductors in switching process. A multiple dimensional power loss table is obtained and applied to the system simulation for power loss prediction. The device simulation of the proposed model and APLM was run in advance in PSCAD/EMTDC with nano-second (ns) time step for high accuracy whereas the overall system application then can be simulated through Look-Up Table (LUT) and simple switch model with micro-second (mu s) time step for fast simulation speed. Further, a boost converter has been designed and built to verify the proposed model. This approach is promising for system design optimization and device selection.