Electron- and proton irradiation of strongly doped silicon of p-type: Formation and annealing of boron-related defects

被引：3

作者：

Emtsev, Vadim ^{[1
]}

Abrosimov, Nikolay ^{[2
]}

Kozlovski, Vitalii ^{[3
]}

Lastovskii, Stanislav ^{[4
]}

Oganesyan, Gagik ^{[1
]}

Poloskin, Dmitrii ^{[1
]}

机构：

[1] Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia

[2] Leibniz Inst Kristallzuchtung IKZ, D-12489 Berlin, Germany

[3] Peter Great St Petersburg Polytech Univ, St Petersburg 195251, Russia

[4] NAS Belarus, Sci Pract Mat Res Ctr, Minsk 220072, BELARUS

来源：

JOURNAL OF APPLIED PHYSICS | 2022年 / 131卷 / 12期

关键词：

NUCLEAR DOUBLE-RESONANCE; INTERSTITIAL BORON; VACANCY; EPR;

D O I：

10.1063/5.0078043

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A detailed study of boron-related defects in strongly doped p-type silicon subjected to irradiation with 3.5 MeV electrons and 15 MeV protons are carried out by means of electrical measurements over a wide temperature range of 25 & LE; T & LE; 300 K. Investigations are aimed at taking a close look into the nature of radiation-produced defects that are stable at room temperature. Data obtained allow one to reveal two types of dominant boron-related complexes, which are attributed to the substitutional boron-interstitial boron pair being neutral in p-type Si and the substitutional boron-divacancy complex displaying donor activity. The first type of the defects is very stable and its annealing runs in a temperature region of 500-700 & DEG;C. Another type of defect turned out to be stable up to 300 & DEG;C. The formation and annealing processes of the boron-related defects appear to be very similar for electron and proton irradiation of p-type Si.& nbsp;Published under an exclusive license by AIP Publishing.

引用

页数：7

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