Improvement of in-field performance for EuBCO with heavily doped BHO coated conductors by PLD method with high temperature deposition and low temperature annealing

被引:1
|
作者
Ibi, A. [1 ]
Machi, T. [1 ]
Nakaoka, K. [1 ]
Sato, M. [1 ]
Izumi, T. [1 ]
Nishimura, J. [2 ]
Miura, M. [2 ]
Yokoe, D. [3 ]
Kato, T. [3 ]
Hirayama, T. [3 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, 1-2-1 Namiki, Tsukuba, Ibaraki 3058564, Japan
[2] Seikei Univ, 3-3-1 Kichijoji Kitamachi, Musashino, Tokyo 1808633, Japan
[3] Japan Fine Ceram Ctr JFCC, Atsuta Ku, 2-4-1 Mutsuno, Nagoya, Aichi 4568587, Japan
关键词
ARTIFICIAL PINNING CENTERS; LONG; FABRICATION; DEFECTS; GDBCO; FILMS; A/CM;
D O I
10.1088/1757-899X/756/1/012024
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Recently, we have found that BaHfO3 (BHO)-doped EuBa2Cu3O7-x (EuBCO) coated conductors by the combination of the IBAD and PLD methods show high critical current (I-c) even in an applied magnetic field. However, for the wide application of BaMO3 (BMO, M: metal)-doped REBa2Cu3O7-x (REBCO) coated conductors to industrial and commercial applications, much higher in-field performance is required. It is known that the critical temperature (T-c) of BMO-doped REBCO layers, especially by the PLD method, decreases with the increase in the amount of doped BMO apparently due to the strain of the REBCO induced by BMO doping. Therefore, it is difficult to improve the critical current density (J(c)) in the applied magnetic field of BMO doped REBCO coated conductors only by increasing the quantity of BMO especially at high temperatures such as 77 K. To solve this problem, we tried to optimize the deposition conditions, especially the deposition temperature and O-2 annealing processes for heavily BHO doped-EuBCO layers fabricated by the PLD method. As a result, the combination of high temperature deposition and low temperature O-2 annealing was effective in obtaining high T-c and high in-field performance of heavily BMO-doped REBCO coated conductors. The T-c of 10 mol% BHO-doped EuBCO coated conductors was 93.9 K (setting a deposition temperature of 1150 degrees C and O-2 annealing temperature of 280 degrees C) which is nearly the same as that for non-doped EuBCO coated conductors. On the other hand, overdoping is preferred for high in-field J(c). Therefore, a high J(c) under a magnetic field was obtained in the BMO-doped REBCO layer annealed at a low temperature. The J(c (min.)) of 5 mol% BHO-doped EuBCO coated conductors was 0.62 MA/cm(2) at 77 K and 3 T (setting deposition temperature of 1150 degrees C and O-2 annealing temperature of 250 degrees C). Using these results, we confirm the successful fabrication of heavily BHO-doped EuBCO coated conductors showing high in-field performance by the PLD method.
引用
收藏
页数:8
相关论文
共 18 条
  • [1] Development of long coated conductors with high in-field Ic performance by PLD method at high production rate
    Ibi, Akira
    Yoshida, Tomo
    Izumi, Teruo
    Shiohara, Yuh
    Yokoe, Daisaku
    Kato, Takeharu
    Hirayama, Tsukasa
    PROCEEDINGS OF THE 28TH INTERNATIONAL SYMPOSIUM ON SUPERCONDUCTIVITY (ISS 2015), 2016, 81 : 97 - 100
  • [2] Modeling and Comparison of In-Field Critical Current Density Anisotropy in High-Temperature Superconducting (HTS) Coated Conductors
    Hu, Di
    Ainslie, Mark D.
    Raine, Mark J.
    Hampshire, Damian P.
    Zou, Jin
    IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 2016, 26 (03)
  • [3] HIGH TEMPERATURE LOW SAG CONDUCTORS AS METHOD FOR THE IMPROVEMENT OF ELECTRICAL TRANSMISSION LINES
    Berjozkina, Svetlana
    Sauhats, Antans
    Bargels, Vladimirs
    Vanzovichs, Edvins
    ELECTRICAL AND CONTROL TECHNOLOGIES, 2012, : 200 - 205
  • [4] Properties of recent IBAD-MOCVD coated conductors relevant to their high field, low temperature magnet use
    Braccini, V.
    Xu, A.
    Jaroszynski, J.
    Xin, Y.
    Larbalestier, D. C.
    Chen, Y.
    Carota, G.
    Dackow, J.
    Kesgin, I.
    Yao, Y.
    Guevara, A.
    Shi, T.
    Selvamanickam, V.
    SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 2011, 24 (03):
  • [5] High performance thin film transistor with low temperature atomic layer deposition nitrogen-doped ZnO
    Lim, S. J.
    Kwon, Soon-ju
    Kim, Hyungjun
    Park, Jin-Seong
    APPLIED PHYSICS LETTERS, 2007, 91 (18)
  • [6] Improvement of Performance of Cu2ZnSn(S, Se)4 Solar Cells by Low-Temperature Annealing of B-Doped CdS
    Ma, Ding
    Li, Mengge
    Yao, Bin
    Li, Yongfeng
    Ding, Zhanhui
    Zhang, Jiayong
    Wang, Chunkai
    Sun, Yuting
    Liu, Yue
    Sun, Xiaofei
    Zhu, Yan
    SOLAR RRL, 2023, 7 (24)
  • [7] Effects of Background Magnetic Field on Continuous Critical Current Measurement Using Pulsed Current Inductive Method for High-Temperature Superconducting Coated-Conductors
    Chen, Yuanlong
    Li, Yi
    Li, Xiao-Fen
    Zhu, Siping
    Li, Ying-Zhe
    IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 2025, 35 (05)
  • [8] Upgrading Design to a 25 T Cryogen-Free Superconducting Magnet Based on Low Temperature and High Magnetic Field Properties of the Practical CVD Processed Coated Conductors
    Awaji, Satoshi
    Ishihara, Ryosuke
    Namba, Masafumi
    Nishijima, Gen
    Oguro, Hidetoshi
    Watanabe, Kazuo
    Shikimachi, Koji
    Hirano, Naoki
    Nagaya, Shigeo
    IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 2010, 20 (03) : 592 - 595
  • [9] Nitrogen-Doped ZnO Film Fabricated Via Rapid Low-Temperature Atomic Layer Deposition for High-Performance ZnON Transistors
    Ding, Xingwei
    Yang, Jun
    Qin, Cunping
    Yang, Xuyong
    Ding, Tao
    Zhang, Jianhua
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (08) : 3283 - 3290
  • [10] Solution-Processed LiF-Doped ZnO Films for High Performance Low Temperature Field Effect Transistors and Inverted Solar Cells
    Chang, Jingjing
    Lin, Zhenhua
    Zhu, Chunxiang
    Chi, Chunyan
    Zhang, Jie
    Wu, Jishan
    ACS APPLIED MATERIALS & INTERFACES, 2013, 5 (14) : 6687 - 6693