MODE LOCKING OF OPTICALLY PUMPED LONG WAVELENGTH InP-BASED SEMICONDUCTOR DISK LASERS WITH GaInNAs SATURABLE ABSORBER

被引：0
|
作者：
Khadour, A. [1 ]
Bouchoule, S. [1 ]
Aubin, G. [1 ]
Tourrenc, J. P. [1 ]
Miard, A. [1 ]
Harmand, J. C. [1 ]
Decobert, J. [2 ]
Oudar, J. L. [1 ]
机构：
[1] Lab Photon & Nanostruct, Route Nozay, F-91460 Marcoussis, France
[2] Alcatel III V Lab, F-91460 Marcoussis, France
来源：
2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2008年
关键词：
external cavity; Passive mode-locking; semiconductor laser; SEmiconductor Saturable Absorber Mirror (SESAM); Vertical-External-Cavity Surface-Emitting Laser (VECSEL);
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have used a two quantum-well GaInNAs Semiconductor Saturable Absorber Mirror (SESAM) with a high power InP-Based semiconductor disk laser to obtain a 2GHz mode locked OP-VECSEL laser with a pulse width <20ps.
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页码：464 / +
页数：2
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