Effects of Er2O3 on electrical properties of the SnO2•CoO•Ta2O5 varistor system

被引:0
|
作者
Wang, CM [1 ]
Wang, JF [1 ]
Chen, HC [1 ]
Su, WB [1 ]
Zang, GZ [1 ]
Qi, P [1 ]
机构
[1] Shandong Univ, Sch Phys & Microelect, Natl Key Lab Crystal Mat, Jinan 250100, Peoples R China
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中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We investigate the effects of Er2O3 on electrical properties of the SnO2.CoO.Ta-2 O-5 varistor system sintered at 1400degreesC. It is found that all the samples have excellent nonlinear electrical characteristics and the sample with 0.50mol% Er2O3 has the best nonlinear electrical property and the highest nonlinear coefficient (alpha = 43.7). The high nonlinear coefficient value obtained in the system indicates that the SnO2-based varistor is a candidate for ZnO-based varistors in commercial applications. Er2O3 additive can significantly affect the average grain size. With increasing Er2O3 concentration from 0.10mol% to 1.00mol%, the average grain size decreases from 21.21mum to 10.6mum, the breakdown electrical field increases from 208V/mm to 459V/mm, and the relative electrical permittivity decreases from 2440 to 1210. The reason that the grain size decreases with increasing Er2O3 concentration is explained. Also, we present a modified defect barrier model to illustrate the grainboundary barrier formation of Er2O3-doped SnO2 based varistors.
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页码:716 / 719
页数:4
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