Room temperature in-plane ferroelectricity in van der Waals In2Se3

被引:257
|
作者
Zheng, Changxi [1 ,2 ,3 ]
Yu, Lei [1 ]
Zhu, Lin [1 ]
Collins, James L. [2 ,4 ,5 ]
Kim, Dohyung [6 ]
Lou, Yaoding [7 ]
Xu, Chao [8 ]
Li, Meng [1 ]
Wei, Zheng [1 ]
Zhang, Yupeng [9 ]
Edmonds, Mark T. [2 ,4 ,5 ]
Li, Shiqiang [10 ]
Seidel, Jan [6 ,11 ]
Zhu, Ye [8 ]
Liu, Jefferson Zhe [7 ]
Tang, Wen-Xin [1 ]
Fuhrer, Michael S. [2 ,4 ,5 ]
机构
[1] Chongqing Univ, Coll Mat Sci & Engn, Chongqing 400044, Peoples R China
[2] Monash Univ, Monash Ctr Atomically Thin Mat, Clayton, Vic 3800, Australia
[3] Monash Univ, Dept Civil Engn, Clayton, Vic 3800, Australia
[4] Monash Univ, Australian Res Council ARC Ctr Excellence Future, Clayton, Vic 3800, Australia
[5] Monash Univ, Sch Phys & Astron, Clayton, Vic 3800, Australia
[6] Univ New South Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
[7] Univ Melbourne, Dept Mech Engn, Melbourne, Vic 3010, Australia
[8] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
[9] Shenzhen Univ, Coll Elect Sci & Technol, Shenzhen 518060, Peoples R China
[10] Univ Melbourne, Dept Elect & Elect Engn, Melbourne, Vic 3010, Australia
[11] Univ New South Wales, ARC Ctr Excellence Future Low Energy Elect Techno, Sydney, NSW 2052, Australia
来源
SCIENCE ADVANCES | 2018年 / 4卷 / 07期
基金
中国国家自然科学基金; 澳大利亚研究理事会;
关键词
PHASE; PIEZOELECTRICITY; TRANSITIONS; DISCOVERY;
D O I
10.1126/sciadv.aar7720
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Van der Waals (vdW) assembly of layered materials is a promising paradigm for creating electronic and optoelectronic devices with novel properties. Ferroelectricity in vdW layered materials could enable nonvolatile memory and low-power electronic and optoelectronic switches, but to date, few vdW ferroelectrics have been reported, and few in-plane vdW ferroelectrics are known. We report the discovery of in-plane ferroelectricity in a widely investigated vdW layered material,VIn2Se3. The in-plane ferroelectricity is strongly tied to the formation of one-dimensional superstructures aligning along one of the threefold rotational symmetric directions of the hexagonal lattice in the c plane. Surprisingly, the superstructures and ferroelectricity are stable to 200 degrees C in both bulk and thin exfoliated layers of In2Se3. Because of the in-plane nature of ferroelectricity, the domains exhibit a strong linear dichroism, enabling novel polarization-dependent optical properties.
引用
收藏
页数:7
相关论文
共 50 条
  • [1] In-Plane Ferrielectric Order in van der Waals β′-In2Se3
    Wang, Lin
    Zhou, Xin
    Su, Mengyao
    Zhang, Yishu
    Li, Runlai
    Zhang, Rongrong
    Wu, Xiao
    Wu, Zhenyue
    Wong, Walter
    Xu, Qing-hua
    He, Qian
    Loh, Kian Ping
    [J]. ACS NANO, 2023, 18 (01) : 809 - 818
  • [2] Electronic Band Structure of In-Plane Ferroelectric van der Waals β′-In2Se3
    Collins, James L.
    Wang, Chutian
    Tadich, Anton
    Yin, Yuefeng
    Zheng, Changxi
    Hellerstedt, Jack
    Grubisic-Cabo, Antonija
    Tang, Shujie
    Mo, Sung-Kwan
    Riley, John
    Huwald, Eric
    Medhekar, Nikhil, V
    Fuhrer, Michael S.
    Edmonds, Mark T.
    [J]. ACS APPLIED ELECTRONIC MATERIALS, 2020, 2 (01): : 213 - 219
  • [3] Ferroelectricity and phase transitions in In2Se3 van der Waals material
    Soleimani, Maryam
    Pourfath, Mahdi
    [J]. NANOSCALE, 2020, 12 (44) : 22688 - 22697
  • [4] Temperature- and thickness-dependence of robust out-of-plane ferroelectricity in CVD grown ultrathin van der Waals α-In2Se3 layers
    Weng Fu Io
    Shuoguo Yuan
    Sin Yi Pang
    Lok Wing Wong
    Jiong Zhao
    Jianhua Hao
    [J]. Nano Research, 2020, 13 : 1897 - 1902
  • [5] In-Plane Ferroelectricity in Thin Flakes of Van der Waals Hybrid Perovskite
    You, Lu
    Liu, Fucai
    Li, Hongsen
    Hu, Yuzhong
    Zhou, Shuang
    Chang, Lei
    Zhou, Yang
    Fu, Qundong
    Yuan, Guoliang
    Dong, Shuai
    Fan, Hong Jin
    Gruverman, Alexei
    Liu, Zheng
    Wang, Junling
    [J]. ADVANCED MATERIALS, 2018, 30 (51)
  • [6] Two-dimensional ferroelasticity in van der Waals β'-In2Se3
    Xu, Chao
    Mao, Jianfeng
    Guo, Xuyun
    Yan, Shanru
    Chen, Yancong
    Lo, Tsz Wing
    Chen, Changsheng
    Lei, Dangyuan
    Luo, Xin
    Hao, Jianhua
    Zheng, Changxi
    Zhu, Ye
    [J]. NATURE COMMUNICATIONS, 2021, 12 (01)
  • [7] Two-dimensional ferroelasticity in van der Waals β’-In2Se3
    Chao Xu
    Jianfeng Mao
    Xuyun Guo
    Shanru Yan
    Yancong Chen
    Tsz Wing Lo
    Changsheng Chen
    Dangyuan Lei
    Xin Luo
    Jianhua Hao
    Changxi Zheng
    Ye Zhu
    [J]. Nature Communications, 12
  • [8] Efficient terahertz generation from van der Waals α-In2Se3
    Duan, Shijie
    Yang, Ming
    Zhou, Suyuan
    Zhang, Longhui
    Han, Jinsen
    Sun, Xu
    Wang, Guang
    Liu, Changqin
    Kang, Dongdong
    Wang, Xiaowei
    Chen, Jiahao
    Dai, Jiayu
    [J]. CHINESE OPTICS LETTERS, 2024, 22 (01)
  • [9] Efficient terahertz generation from van der Waals α-In2Se3
    段诗婕
    杨鸣
    周溯媛
    张隆辉
    韩锦森
    孙旭
    王广
    刘昌勤
    康冬冬
    王小伟
    陈家浩
    戴佳钰
    [J]. Chinese Optics Letters, 2024, 22 (01) : 146 - 151
  • [10] Optical Effects on Polarization States in van der Waals Ferroelectric α-In2Se3
    Parker, Jacob
    Gabel, Matthew
    Mantilla, Alexander B. C.
    Gu, Yi
    [J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2023, 127 (45): : 22157 - 22163