Continuously-tuned tunneling behaviors of ferroelectric tunnel junctions based on BaTiO3/La0.67Sr0.33MnO3 heterostructure

被引：7
|
作者：
Ou, Xin [1 ,2 ]
Xu, Bo [1 ,2 ]
Gong, Changjie [1 ,3 ]
Lan, Xuexin [1 ,3 ]
Yin, Qiaonan [1 ,2 ]
Xia, Yidong [1 ,2 ]
Yin, Jiang [1 ,2 ]
Liu, Zhiguo [1 ,2 ]
机构：
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
[2] Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China
[3] Nanjing Univ, Dept Phys, Nanjing 210093, Jiangsu, Peoples R China
来源：
AIP ADVANCES | 2014年 / 4卷 / 05期
基金：
中国国家自然科学基金;
关键词：
GIANT ELECTRORESISTANCE;
D O I：
10.1063/1.4876234
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this work, we fabricate BaTiO3/La0.67Sr0.33MnO3 (BTO/LSMO) ferroelectric tunnel junction on (001) SrTiO3 substrate by pulsed laser deposition method. Combining piezoresponse force and conductive-tip atomic force microscopy, we demonstrate robust and reproducible polarization-controlled tunneling behaviors with the resulting tunneling electroresistance value reaching about 10(2) in ultrathin BTO films (similar to 1.2 nm) at room temperature. Moreover, local poling areas with different conductivity are finally achieved by controlling the relative proportion of upward and downward domains, and different poling areas exhibit stable transport properties. (C) 2014 Author(s).
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收藏
页数：6
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