Topological Insulators as Ultrafast Auston Switches in On-Chip THz-Circuits

被引:17
|
作者
Kastl, C. [1 ,2 ,3 ]
Karnetzky, C. [1 ,2 ]
Brenneis, A. [1 ,2 ]
Langrieger, F. [1 ,2 ]
Holleitner, Alexander [1 ,2 ]
机构
[1] TUM, Walter Schottky Inst, D-85748 Garching, Germany
[2] TUM, Dept Phys, D-85748 Garching, Germany
[3] Mol Foundry Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA
基金
欧洲研究理事会;
关键词
Terms-Optoelectronic devices; terahertz radiation; terahertz materials; topological insulator; ultrafast electronics; ultrafast optics; COPLANAR TRANSMISSION-LINES; HGTE QUANTUM-WELLS; DISPERSION; RADIATION; PULSES; STATE;
D O I
10.1109/JSTQE.2016.2641343
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We demonstrate that the three-dimensional topological insulator Bi-2 Se-3 can be exploited as an ultrafast photoswitch in high-frequency optoelectronic circuits without the need to apply a voltage bias to the topological insulator. Bi-2 Se-3 -films are optically excited with a circularly polarized laser pulse. The circular photogalvanic effect gives rise to an ultrafast surface current. We use coplanar THz-striplines and an on-chip pump-probe scheme to sample the ultrafast transient photocurrent. For such subpicosecond electromagnetic transients, the stripline circuit introduces significant broadening due to dispersion and attenuation. Therefore, we compute the effective refractive index of the striplines and introduce a back-transformation of the distorted signal to explore the original ultrafast currents in the topological insulator. Our results show how to use topological insulators as unipolar THz-sources in on-chip stripline circuits.
引用
收藏
页数:5
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