Dielectric relaxation mechanisms of BiMn2O5 ceramics

被引:33
|
作者
Lin, Y. Q. [1 ]
Wu, Y. J. [1 ]
Chen, X. M. [1 ]
Gu, S. P. [1 ]
Tong, J. [1 ]
Guan, S. [1 ]
机构
[1] Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China
基金
美国国家科学基金会;
关键词
annealing; bismuth compounds; dielectric relaxation; ferroelectric ceramics; hopping conduction; multiferroics; vacancies (crystal); MAGNETIC-FIELDS; FERROELECTRICITY; MULTIFERROICS; POLARIZATION;
D O I
10.1063/1.3080248
中图分类号
O59 [应用物理学];
学科分类号
摘要
Dielectric properties of multiferroic BiMn2O5 ceramics were evaluated over broad temperature and frequency ranges. Two Debye-type dielectric relaxations were observed at low temperatures (130-250 K) and high temperatures (200-450 K), respectively. The low temperature relaxation with an activation energy of 0.18 eV was attributed to charge carrier hopping process between Mn3+ and Mn4+. The high temperature dielectric relaxation with an activation energy of 0.38 eV, which is similar to the activation energy of conductivity, was associated with oxygen vacancies related defect complex. The dielectric response at high temperatures was significantly suppressed and the dc conductivity increased after oxygen annealing.
引用
收藏
页数:5
相关论文
共 50 条
  • [1] Synthesis and Characterization of BiMn2O5 Ceramics
    Kumar, K. Saravana
    Joseph, D. Paul
    Raja, S. Philip
    Manimuthu, P.
    Venkateswaran, C.
    SOLID STATE PHYSICS: PROCEEDINGS OF THE 55TH DAE SOLID STATE PHYSICS SYMPOSIUM 2010, PTS A AND B, 2011, 1349 : 1155 - +
  • [2] Relaxor behavior in multiferroic BiMn2O5 ceramics
    Fier, I.
    Walmsley, L.
    Souza, J. A.
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (08)
  • [3] Enhanced multiferroism in Gd-doped BiMn2O5 ceramics
    Alam, M. S.
    Hossain, Rana
    Basith, M. A.
    CERAMICS INTERNATIONAL, 2018, 44 (02) : 1594 - 1602
  • [4] Effect of Ce substitution on magnetic and dielectric properties of BiMn2O5
    Sun, Z. H.
    Cheng, B. L.
    Dai, S.
    Jin, K. J.
    Zhou, Y. L.
    Lu, H. B.
    Chen, Z. H.
    Yang, G. Z.
    JOURNAL OF APPLIED PHYSICS, 2006, 99 (08)
  • [5] Contribution of an extrinsic mechanism for the electrical polarization in BiMn2O5 ceramics
    Fier, I.
    Chinaglia, D. L.
    Walmsley, L.
    Pereira, E. C.
    Rabelo, A. C.
    Freitas, R. G.
    AIP ADVANCES, 2012, 2 (04):
  • [6] DIELECTRIC, PYROELECTRIC AND MAGNETIC-PROPERTIES OF BIMN2O5 CRYSTALS
    ZHITOMIRSKII, ID
    SKOROKHODOV, NE
    BUSH, AA
    CHECHERNIKOVA, OI
    CHUPRAKOV, VF
    VENEVTSEV, YN
    FIZIKA TVERDOGO TELA, 1983, 25 (03): : 953 - 955
  • [7] Dielectric relaxations and magnetodielectric response in BiMn2O5 single crystal
    Yin, L. H.
    Yuan, B.
    Chen, J.
    Zhang, D. M.
    Zhang, Q. L.
    Yang, J.
    Dai, J. M.
    Song, W. H.
    Sun, Y. P.
    APPLIED PHYSICS LETTERS, 2013, 103 (15)
  • [8] The practical doping principles of tuning antiferromagnetic state in BiMn2O5 ceramics
    Su, Wenlong
    He, Guixin
    Bao, Xiaoxu
    He, Chunyan
    Li, Ying
    Zhang, Lingding
    Zhang, Ying
    Liu, Jiale
    Chen, Jiawei
    Chen, Jieyu
    Bai, Yulong
    Zhao, Shifeng
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2023, 129 (02):
  • [9] The practical doping principles of tuning antiferromagnetic state in BiMn2O5 ceramics
    Wenlong Su
    Guixin He
    Xiaoxu Bao
    Chunyan He
    Ying Li
    Lingding Zhang
    Ying Zhang
    Jiale Liu
    Jiawei Chen
    Jieyu Chen
    Yulong Bai
    Shifeng Zhao
    Applied Physics A, 2023, 129
  • [10] Antiferromagnetic resonance of polycrystalline BiMn2O5
    Santana, V. T.
    Walmsley, L.
    Fier, I.
    Eichel, R. -A.
    Jakes, P.
    Chumak, I.
    Ozarowski, A.
    van Tol, J.
    Nascimento, O. R.
    SOLID STATE COMMUNICATIONS, 2015, 207 : 40 - 43