Effect of Dielectric Behavior of Gate Dielectric Polymers on Memory Characteristics of Organic Field-effect Transistors

被引：1

作者：

Sakai, Heisuke ^{[1
]}

Cheong, Hea-Jeong ^{[1
]}

Kodzasa, Takehito ^{[1
]}

Tokuhisa, Hideo ^{[1
]}

Tokoro, Kazuhiko ^{[1
]}

Yoshida, Manabu ^{[1
]}

Ikoga, Taihei ^{[2
]}

Nakamura, Kazuki ^{[2
]}

Kobayashi, Norihisa ^{[2
]}

Uemura, Sei ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol ANT, Flexible Elect Res Ctr, Tsukuba, Ibaraki 3058565, Japan

[2] Chiba Univ, Grad Sch Adv Integrat Sci, Dept Image & Mat Sci, Chiba 2638522, Japan

来源：

JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY | 2014年 / 27卷 / 03期

关键词：

Organic transistor memory; polypeptide; thermally stimulated depolarized current (TSDC); dielectric dispersion;

D O I：

10.2494/photopolymer.27.333

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

Memory characteristics of organic field-effect transistors (OFETs) fabricated using poly(gamma-methyl-L-glutamate) (PMLG) and poly(epsilon-benzyloxycarbonyl-L-lysine) [PLys(z)] as gate dielectrics are investigated. The origin of difference in the memory retention property in the transfer characteristics of the OFETs is investigated by thermally stimulated depolarized current (TSDC) and dielectric spectra measurements for the PLys(z) and PMLG films. TSDC measurements reveal that the depolarization of the PLys(z) film is mainly dominated by a single relaxation process around room temperature, but that of the PMLG film is not dominated by a relaxation process. Further, the PLys(z) film shows dielectric dispersion near room temperature, but the PMLG film does not show any dispersion. This causes difference in the electric characteristics of OFETs.

引用

页码：333 / 337

页数：5

共 50 条

[1] Effect of amide bond in gate dielectric polymers on memory performance of organic field-effect transistors
Sakai, Heisuke
Cheong, Hea-Jeong
Kodzasa, Takehito
Tokuhisa, Hideo
Tokoro, Kazuhiko
Yoshida, Manabu
Ikoga, Taihei
Nakamura, Kazuki
Kobayashi, Norihisa
Uemura, Sei
JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (05)
[2] Bending effect of organic field-effect transistors with polyimide gate dielectric layers
Sekitani, T
Shingo, I
Kato, Y
Someya, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (4B): : 2841 - 2843
[3] Bending effect of organic field-effect transistors with polyimide gate dielectric layers
Sekitani, T. (sekitani@ap.t.u-tokyo.ac.jp), 1600, Japan Society of Applied Physics (44):
[4] Poly(vinyl alcohol) gate dielectric in organic field-effect transistors
Nawaz, Ali
Hummelgen, Ivo A.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2019, 30 (06) : 5299 - 5326
[5] High performance organic field-effect transistors with fluoropolymer gate dielectric
Kalb, Wolfgang L.
Mathis, Thomas
Haas, Simon
Stassen, Arno F.
Batlogg, Bertram
ORGANIC FIELD-EFFECT TRANSISTORS VI, 2007, 6658
[6] A hydrogel capsule as gate dielectric in flexible organic field-effect transistors
Dumitru, L. M.
Manoli, K.
Magliulo, M.
Ligonzo, T.
Palazzo, G.
Torsi, L.
APL MATERIALS, 2015, 3 (01):
[7] Investigation of polysilsesquioxane as a gate dielectric material for organic field-effect transistors
Kawamura, M.
Nakahara, Yoshio
Ohse, Mitsuhiro
Kumei, Maki
Uno, K.
Sakamoto, Hidefumi
Kimura, Keiichi
Tanaka, Ichiro
APPLIED PHYSICS LETTERS, 2012, 101 (05)
[8] Poly(vinyl alcohol) gate dielectric in organic field-effect transistors
Ali Nawaz
Ivo A. Hümmelgen
Journal of Materials Science: Materials in Electronics, 2019, 30 : 5299 - 5326
[9] Pentacene organic field-effect transistors with polyimide gate dielectric layer
Dong, Mao-Jun
Tao, Chun-Lan
Zhang, Xu-Hui
Ou, Gu-Ping
Zhang, Fu-Jia
Guangdianzi Jiguang/Journal of Optoelectronics Laser, 2008, 19 (02): : 161 - 163
[10] Organic field-effect transistors and memory elements using deoxyribonucleic acid (DNA) gate dielectric
Stadler, Philipp
Oppelt, Kerstin
Singh, Thokchom Birendra
Grote, James G.
Schwoediauer, Reinhard
Bauer, Siegfried
Piglmayer-Brezina, Heidi
Baeuerle, Dieter
Sariciftci, Niyazi Serdar
ORGANIC ELECTRONICS, 2007, 8 (06) : 648 - 654

← 1 2 3 4 5 →