Improved interfacial property by small molecule ethanediamine for high performance inverted planar perovskite solar cells

被引:0
|
作者
Zhang, Guodong [1 ,2 ]
Zhang, Yunxin [2 ]
Chen, Siqi [2 ]
Chen, Hao [2 ]
Liu, Le [2 ]
Ding, Wenming [1 ]
Wang, Jinhui [1 ]
Zhang, Anyu [1 ]
Pang, Shuping [2 ]
Guo, Xin [3 ]
Yu, Lianqing [1 ]
Jiu, Tonggang [2 ]
机构
[1] China Univ Petr, Sch Mat Sci & Engn, Qingdao 266580, Shandong, Peoples R China
[2] Chinese Acad Sci, Qingdao Inst Bioenergy & Bioproc Technol, Qingdao 266101, Shandong, Peoples R China
[3] Chinese Acad Sci, Dalian Inst Chem Phys, Dalian 116023, Liaoning, Peoples R China
基金
中国国家自然科学基金;
关键词
Improved interfacial property; Inverted planar perovskite solar cells; Passivated trap states; Crystallinity; Ethanediamine; HOLE-TRANSPORT LAYER; HIGH-EFFICIENCY; CONJUGATED POLYELECTROLYTE; HALIDE PEROVSKITES; PASSIVATION; VOLTAGE;
D O I
10.1016/j.jechem.2020.06.029
中图分类号
O69 [应用化学];
学科分类号
081704 ;
摘要
We report a simple and effective method to realize desirable interfacial property for inverted planar perovskite solar cells (PSCs) by using small molecule ethanediamine for the construction of a novel polyelectrolyte hole transport material (P3CT-ED HTM). It is found that P3CT-ED can not only improve the hole transport property of P3CT-K but also improve the crystallinity of adjacent perovskite film. In addition, the introduction of ethanediamine into P3CT realigns the conduction and valence bands upwards, passivates surface defects and reduces non-radiative recombination. As a consequence, compared to P3CT-K hole transport layer (HTL) based devices, the average power conversion efficiency (PCE) is boosted from 17.2% to 19.6% for the counterparts with P3CT-ED, with simultaneous enhancement in open circuit voltage and fill factor. The resultant device displays a champion PCE of 20.5% with negligible hysteresis. (C) 2020 Science Press and Dalian Institute of Chemical Physics, Chinese Academy of Sciences. Published by ELSEVIER B.V. and Science Press. All rights reserved.
引用
收藏
页码:467 / 474
页数:8
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