Tunable directional coupler for RF front-end applications

被引：9
|
作者：
Solomko, V. [1 ]
Tanc, B. [1 ]
Kehrer, D. [1 ]
Ilkov, N. [1 ]
Bakalski, W. [1 ]
Simbuerger, W. [1 ]
机构：
[1] Infineon Technol AG RF & Sensors, D-85579 Neubiberg, Germany
来源：
ELECTRONICS LETTERS | 2015年 / 51卷 / 24期
关键词：
mobile radio; directional couplers; CMOS integrated circuits; MIS devices; switches; UHF transistors; handheld mobile devices; radiofrequency front ends; tunable directional coupler; bulk RF-CMOS technology; single die; digitally-tuned termination network; isolated port; RF-switch transistors; channel resistance; metal oxide semiconductor device; MOS device; fine-tuned termination network; size; 0; 13; mum; frequency 699 MHz to 2; 7; GHz; loss; 15; dB;
D O I：
10.1049/el.2015.2601
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A tunable directional coupler for radio frequency (RF) front-ends of handheld mobile devices is presented. The coupler is implemented in a 0.13 m bulk RF-CMOS technology with all elements monolithically integrated on a single die. A digitally-tuned termination network at the isolated port of the coupler is realised solely with RF-switch transistors using the channel resistance of a metal-oxide-semiconductor (MOS) device. The fine-tuned termination network allows the coupler to achieve a directivity of over 25 dB in the whole cellular frequency range from 699 MHz up to 2.7 GHz. The worst-case insertion loss in the transmitted path is 0.15 dB at 2.7 GHz.
引用
收藏
页码：2012 / 2013
页数：2
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