Lithographically patterned nanowire electrodeposition

被引：10

作者：

Xiang, Chengxiang ^{[1
]}

Thompson, Michael A. ^{[1
]}

Yang, Fan ^{[1
]}

Menke, Erik J. ^{[2
]}

Yang, Li-Mei C. ^{[2
]}

Penner, Reginald M. ^{[1
]}

机构：

[1] Univ Calif Irvine, Dept Chem, Irvine, CA 92697 USA

[2] Univ Barcelona, Dept Phys Chem, E-08007 Barcelona, Spain

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 11 2008 | 2008年 / 5卷 / 11期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1002/pssc.200779406

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Lithographically Patterned Nanowire Electrodeposition (LPNE) is a new nanofabrication technique in which photo- lithography is used to define the position of electrodeposited nanowires on the surface of a dielectric such as glass or oxidized silicon. In LPNE, a resist-covered nickel film with v. thickness of beween 6 and 100 nm is photopatterned. After development of the resist, the exposed nickel is dissolved in, nitric acid under conditions that produce an "undercut" at the) resist edges. This undercut functions as a horizontal trenct, into which metals (e.g., Au, Pt, Pd) can be electrodeposited, using the exposed nickel edge present within this trench. As this trench is filled during electrodeposition, a nanowire with a precisely defined height and width is formed along the en., tire perimeter of the photoresist. LPNE nano-wires can have minimum dimensions of 6 nm (h) x 20 nm (w) and lengths of wore than 1 cm. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：3503 / +

页数：2

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