A unified multiple stress reliability model for microelectronic devices - Application to 1.55 μm DFB laser diode module for space validation

被引:6
|
作者
Bensoussan, A. [1 ,2 ]
Suhir, E. [3 ,4 ,5 ]
Henderson, P. [6 ]
Zahir, M. [7 ]
机构
[1] Inst Rech Technol St Exupery, F-31432 Toulouse, France
[2] Thales Alenia Space France, F-31037 Toulouse, France
[3] Portland State Univ, Portland, OR 97207 USA
[4] Tech Univ, Vienna, Austria
[5] ERS Co, Los Altos, CA USA
[6] Gooch & Housego, Torkay TQ2 7QY, Devon, England
[7] European Space Agcy ESTEC, Noordwijk, Netherlands
关键词
DFB laser diode; Optopelectronics; Reliability; Design-for-Reliability; OHMIC CONTACTS;
D O I
10.1016/j.microrel.2015.06.093
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The establishment of European suppliers for DFB Laser Modules at 1.55 mu m is considered to be essential in the context of future European space programs, where availability, cost and schedule are of primary concerns. Also, in order to minimize the risk, associated with such a development, the supplier will be requested to use components which have already been evaluated and/or validated and/or qualified for space applications. The Arrhenius model is an empirical equation able to model temperature acceleration failure modes and failure mechanisms. The Eyring model is a general representation of Arrhenius equation which takes into account additional stresses than temperature. The present paper suggests to take advantage of these existing theories and derives a unified multiple stress reliability model for electronic devices in order to quantify and predict their reliability figures when operating under multiple stress in harsh environment as for Aerospace, Space, Nuclear, Submarine, Transport or Ground. Application to DFB laser diode module technologies is analyzed and discussed based on evaluation test program under implementation. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1729 / 1735
页数:7
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