Effect of doping and strain modulations on electron transport in monolayer MoS2

The doping and strain effects on the electron transport of monolayer MoS2 are systematically investigated using the first-principles calculations with Boltzmann transport theory. We estimate the mobility has a maximum 275 cm(2)/(Vs) in the low doping level under the strain-free condition. Applying a small strain (similar to 3%) can improve the maximum mobility to 1150 cm(2)/(Vs) and the strain effect is more significant in the high doping level. We demonstrate that the electric resistance mainly due to the electron transitions between K and Q valleys scattered by the M momentum phonons. However, the strain can effectively suppress this type of electron-phonon coupling by changing the energy difference between the K and Q valleys. This sensitivity of mobility to the external strain may direct the improving electron transport of MoS2.