Microwave noise sources in AlGaAs/GaAs HBTs

被引：0
|
作者：
Sakalas, P [1 ]
Schröter, M [1 ]
Zampardi, P [1 ]
Zirath, H [1 ]
Welser, R [1 ]
机构：
[1] Dresden Univ Technol, D-01062 Dresden, Germany
来源：
2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2002年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Scattering and noise parameters of AlGaAs/GaAs HBTs from Conexant with 30 and 35% of A] mole content were measured and modeled. De-embedding of the pad parasitics was accurately performed by using a "two step" method and small-signal modeling. Small-signal hybrid Pi type model parameters were extracted from "cold" and "hot" HBT measurements. Thermal, hot electron and correlated base and collector current shot noises were included in the noise model, which accounted well for the measured noise parameters. From the resolution of noise sources it was found that minimum in noise figure at 5 GHz stems from the correlation of base and collector shot noise. Al content in the alloy does not influence the high frequency, noise properties of the AlGaAs/GaAs HBTs.
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页码：2117 / 2120
页数：4
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