Memory Structures Based on the Self-organization of Cu Nanoparticles Deposited by Hot-Wire CVD on Polythiophene Layers

被引：0

作者：

Dimitrakis, P. ^{[1
]}

Papadimitropoulos, G. ^{[1
]}

Palilis, L. C. ^{[1
]}

Vassilopoulou, M. ^{[1
]}

Normand, P. ^{[1
]}

Argitis, P. ^{[1
]}

Davazoglou, D. ^{[1
]}

机构：

[1] NCSR Demokritos, Inst Microelect, Aghia Paraskevi, Attika, Greece

来源：

EUROCVD 17 / CVD 17 | 2009年 / 25卷 / 08期

关键词：

DEVICES; COMPLEX;

D O I：

10.1149/1.3207708

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Two-terminal Al/P3HT/Cu-NPs/PMMA/Al memory structures have been fabricated on quartz substrates in cross-bar architecture. The characteristics of Cu-NPs on P3HT deposited by HW-CVD were investigated in terms of UV-VIS spectroscopy and AFM measurements. Part of these tri-layer structures exhibit unstable switching of conductivity between a high and a low resistance states, while the other exhibited significant NDR regions in the I-V characteristics of these devices at high voltages. Neither switching nor NDR phenomena were observed in samples without Cu-NPs. Further process and structure optimizations are needed for functional organic bistable memory devices.

引用

页码：1073 / 1079

页数：7

共 2 条

[1] On the development of single and multijunction solar cells with hot-wire CVD deposited active layers
Li, H.
Franken, R. H.
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Schuttauf, J. A.
van der Werf, C. H. M.
Rath, J. K.
Schropp, R. E. I.
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2008, 354 (19-25) : 2445 - 2450
[2] Defect analysis of thin film Si-based alloys deposited by hot-wire CVD using junction capacitance methods
Cohen, J. David
Datta, Shouvik
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Mahan, A. H.
Iwaniczko, Eugene
Xu, Yueqin
Branz, Howard M.
THIN SOLID FILMS, 2008, 516 (05) : 663 - 669

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