New synthetic route for photosensitive poly(benzoxazole)

被引:21
|
作者
Ebara, K [1 ]
Shibasaki, Y [1 ]
Ueda, M [1 ]
机构
[1] Tokyo Inst Technol, Dept Organ & Polymer Mat, Meguro Ku, Tokyo 1528552, Japan
关键词
high temperature materials; imaging; photolithography; poly(benzoxazole); photosensitive compound; photoresists;
D O I
10.1002/pola.10432
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
A new positive working photosensitive poly(benzoxazole) (PBO) precursor based on poly(o-hydroxyazomethine) (3) and 1-{1,1-bis[4-(2-diazo-l-(2H)naphthalenone- 5-sulfonyloxy)phenyl]ethyl)-4-{1-[4- (2-diazo-1(2H)naphthalenone-5-sulfonyloxy)phenyl] methylethyl]benzene (S-DNQ) as a photosensitive compound was developed. 3 was prepared by the condensation of 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane with isophthalaldehyde in 1-methyl-2-pyrrolidinone/toluene under azeotropic conditions. The photosensitive PBO precursor containing 30 wt % S-DNQ showed a sensitivity of 120 mJ cm(-2) and a contrast of 2.2 when it was exposed to 436-nm light and developed with a 2.38 wt % aqueous tetramethylammonium hydroxide solution at room temperature. A fine positive image featuring 10-mum line and space patterns was observed on the film of the photoresist exposed to 200 mJ cm(-1) ultraviolet light at 436 nm by the contact mode. The positive image was successfully converted into the PBO pattern by a thermal treatment. (C) 2002 Wiley Periodicals, Inc.
引用
收藏
页码:3399 / 3405
页数:7
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