The effect of nitrogen ion implantation on wear behaviour of single-crystal SiO2

被引:5
|
作者
Xu, T [1 ]
Lu, JJ [1 ]
Tian, J [1 ]
Xue, QJ [1 ]
机构
[1] Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China
关键词
D O I
10.1088/0022-3727/33/4/316
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effect of nitrogen ion implantation on the wear behaviour and the change of structure of single-crystal SiO2 was investigated by SEM, TEM and XPS. The results show that the tribological properties of single-crystal SiO2 under dry friction conditions change with the nitrogen ion implantation. At low implanted doses, the hardness and critical peeling load for single-crystal SiO2 varies inconspicuously and the tribological properties an also not improved. However, the wear resistance is greatly improved at doses of 5 x 10(16) and 1 x 10(17) N cm(-2). When the dose reaches 5 x 10(17) N cm(-2), the tribological properties of single-crystal SiO2 decrease again. The possible friction and wear mechanisms for single-crystal SiO2 were discussed.
引用
收藏
页码:426 / 429
页数:4
相关论文
共 50 条
  • [1] NITROGEN ION-IMPLANTATION INTO SIO2
    GUPTA, SC
    SHARMA, BL
    AGASHE, VV
    SURFACE TECHNOLOGY, 1980, 10 (02): : 153 - 155
  • [2] NITROGEN ION-IMPLANTATION INTO ZNO SINGLE-CRYSTAL
    KOBAYASHI, K
    OHNO, H
    OKADA, G
    KUMANOTANI, J
    OKAMOTO, S
    DENKI KAGAKU, 1988, 56 (03): : 204 - 205
  • [3] Investigation on the wear mechanism of N+ implanted single-crystal SiO2 by SEM
    Xu, Tao
    Xue, Qunji
    Tian, Jun
    Mocaxue Xuebao/Tribology, 1999, 19 (04): : 289 - 293
  • [4] SiO2 antireflection layers for single-crystal diamond
    Reinhard, D. K.
    Tran, D. T.
    Schuelke, T.
    Becker, M. F.
    Grotjohn, T. A.
    Asmussen, J.
    DIAMOND AND RELATED MATERIALS, 2012, 25 : 84 - 86
  • [5] FORMATION OF ALUMINUM NITRIDE BY NITROGEN-ION IMPLANTATION IN ALUMINUM SINGLE-CRYSTAL
    KIMURA, K
    ONITSUKA, Y
    NAKANISHI, K
    MANNAMI, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (08): : 1145 - 1145
  • [6] Modeling of ion implantation in single-crystal silicon
    Nucl Instrum Methods Phys Res Sect B, 1-4 (173):
  • [7] Modification of single-crystal sapphire by ion implantation
    Demaree, JD
    Kirkpatrick, SR
    Kirkpatrick, AR
    Hirvonen, JK
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 127 : 603 - 607
  • [8] Growth of single-crystal SiO2 film on Ni(111) surface
    Kundu, M
    Murata, Y
    APPLIED PHYSICS LETTERS, 2002, 80 (11) : 1921 - 1923
  • [9] Growth of single-crystal SiO2 clusters on Si(001) surface
    Tanemura, Tetsuo
    Sato, Seiichi
    Kundu, Manisha
    Yamada, Chikashi
    Murata, Yoshitada
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (07)
  • [10] COMPTON-PROFILE STUDIES OF AMORPHOUS AND SINGLE-CRYSTAL SIO2
    ROSENBERG, M
    MARTINO, F
    REED, WA
    EISENBERGER, P
    PHYSICAL REVIEW B, 1978, 18 (02): : 844 - 850