Rapid degradation of MESFET's under impact ionization and low-temperature conditions

被引：0
|
作者：
MartiCanales, J
机构：
[1] Europ. Space Res. and Technol. Ctr.
来源：
IEEE ELECTRON DEVICE LETTERS | 1997年 / 18卷 / 02期
关键词：
D O I：
10.1109/55.553046
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Tests performed on power MESFET's under impact ionization and low-temperature conditions reveal a faster and higher device degradation than those at higher temperatures. Degradation produces a noticeable reduction in breakdown voltage together with an increase in gate leakage current. The same effect is exhibited in high-temperature tests, but is less severe, In this paper, the temperature effect of the degradation on the performance of high output power microwave devices under impact ionization conditions will be illustrated.
引用
收藏
页码：66 / 68
页数：3
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