Deposition of Sm2O3-doped CeO2 layers using the MOCVD method

Sm2O3-doped CeO2 layers were synthesized on the inner surfaces of tube shaped quartz glass substrates using the MOCVD method. Ce(tmhd)(4) and Sm(tmhd)(3) were used as precursors. Argon and air were the carrier gases. Air was also a source of oxygen, necessary for the elimination of carbon (a solid by-product of the reactant pyrolysis). The molar content of Sm(tmhd)(3) in the reactant mixture was: 0.1; 0.2; 0.3. The temperature of the synthesis was maintained at 600-800 degrees C. Such a low synthesis temperature made possible the deposition of amorphous and nanocrystalline layers. The higher the synthesis temperature, the greater the content of the crystalline phase and the larger the crystallites. The obtained layers were analysed by the scanning electron microscopy combined with the EDS and X-ray analyses. This work is a part of research on amorphous and nanocrystalline composite electrolyte CeO2+Sm2O3/ZrO2+Y2O3 for solid oxide fuel cells (SOFC). (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.