Optimization of growth parameters for absorber material SnS thin films grown by SILAR method using response surface methodology

In this paper, SnS films were deposited on glass substrates by successive ionic layer adsorption and reaction method under different deposition conditions. Quality of semiconductor thin films depends on their deposition parameters. The deposition process was optimized by the application of five-level-three-factor central composite design. Response surface methodology was used to optimize deposition parameters including temperature of precursor solutions (27-43 degrees C), dipping time (3-37 s) and dipping cycles (23-57 cycles) for deposition of the SnS thin films. The effect of the deposition parameters on the film growth has been studied using the experimental design methodology. The optimum fabrication conditions were found to be 40 degrees C (temperature), 23.4 s (dipping time) and 50 cycles (dipping cycles), respectively. Under optimum terms, the E-g value of SnS nanostructures calculated as 1.73 eV. The optimized value showed a good fit to the predicted value (1.67 eV). In addition, the structural, optical and morphological properties of thin films were investigated.