Size-dependent strain relaxation in InN islands grown on GaN by metalorganic chemical vapor deposition

被引:4
|
作者
Tsai, Wen-Che [1 ]
Lin, Feng-Yi [1 ]
Ke, Wen-Cheng [1 ]
Lu, Shu-Kai [1 ]
Cheng, Shun-Jen [1 ]
Chou, Wu-Ching [1 ]
Chen, Wei-Kuo [1 ]
Lee, Ming-Chih [1 ]
Chang, Wen-Hao [1 ]
机构
[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan
关键词
finite element analysis; gallium compounds; III-V semiconductors; indium compounds; internal stresses; island structure; MOCVD; Raman spectra; wide band gap semiconductors; MOLECULAR-BEAM EPITAXY; FUNDAMENTAL-BAND GAP;
D O I
10.1063/1.3064166
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report Raman measurements on InN islands grown on GaN by metalorganic chemical vapor deposition. The Raman frequency of the InN E-2 mode is found to decrease exponentially with the island's aspect ratio, indicating a size dependent strain relaxation during the island formation. Our results suggest that most of the strain at the InN-GaN interface have been released plastically during the initial stage of island formations. After that, the residual strain of only -3.5x10(-3) is further relaxed elastically via surface islanding. The experimental data are in agreement with the strain relaxation predicted from a simplified model analysis as well as three-dimensional finite-element simulations.
引用
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页数:3
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