First-principles study of strain effects on Mn in Si

被引:9
|
作者
Yabuuchi, S
Ohta, E
Kageshima, H
Taguchi, A
机构
[1] Keio Univ, Dept Appl Phys & Physicoinformat, Kohoku Ku, Yokohama, Kanagawa 2238522, Japan
[2] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
关键词
first-principles calculation; magnetic semiconductor; Si; strain;
D O I
10.1016/j.physb.2005.12.169
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The effects of strain on Mn impurities in Si were investigated by using first-principles calculations. It is shown that substitutional Mn is stabilized and that the magnetic moment is maintained when a tensile strain is given. This suggests that the tensile strain is effective for improving the crystallinity of epitaxial films. Under high Mn concentration conditions, the substitutional Min complex can cause a structural change and decrease the lattice constant of the crystal. Thus.. the formation of shrinked epitaxial films can cause a structural change related to the substitutional Mn complexes, which might make it impossible to obtain the ferromagnetic property. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:672 / 676
页数:5
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