A METHOD FOR PREDICTING IGBT JUNCTION TEMPERATURE UNDER TRANSIENT CONDITION

被引：0
|
作者：
Ahmed, M. M. R. [1 ]
Putrus, G. A. [1 ]
机构：
[1] Univ Warwick, Coventry CV4 7AL, W Midlands, England
来源：
IECON 2008: 34TH ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY, VOLS 1-5, PROCEEDINGS | 2008年
关键词：
D O I：
暂无
中图分类号：
TP18 [人工智能理论];
学科分类号：
081104 ; 0812 ; 0835 ; 1405 ;
摘要：
In this paper, a method to predict junction temperature of the solid-state switch under transient condition is presented. The method is based on the thermal model of the switch and instantaneous measurement of the energy loss in the device. The method for deriving thermal model parameters from the manufacturers data sheet is derived and verified. A simulation work has been carried out on a single IGBT under different conditions using MATLAB/SIMULINK. The results show that the proposed method is effective to predict the junction temperature of the solid-state device during transient conditions and is applicable to other devices such as diodes and thyristors.
引用
收藏
页码：403 / 408
页数：6
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