EUV Resists Comprised of Main Group Organometallic Oligomeric Materials

被引：13

作者：

Passarelli, James ^{[1
]}

Cardineau, Brian ^{[1
]}

Del Re, Ryan ^{[1
]}

Sortland, Miriam ^{[1
]}

Vockenhuber, Michaela ^{[3
]}

Ekinci, Yasin ^{[3
]}

Sarma, Chandra ^{[3
,4
]}

Neisser, Mark ^{[4
]}

Freedman, Daniel A. ^{[2
]}

Brainard, Robert L. ^{[1
,4
]}

机构：

[1] Coll Nanoscale Sci & Engn, Albany, NY 12033 USA

[2] State Univ New York New Paltz, New Paltz, NY 12561 USA

[3] Paul Scherrer Inst, Villigen, Switzerland

[4] SEMATECH, Albany, NY 12033 USA

来源：

ADVANCES IN PATTERNING MATERIALS AND PROCESSES XXXI | 2014年 / 9051卷

关键词：

D O I：

10.1117/12.2046537

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We present the synthesis and preliminary lithographic evaluation of Molecular Organometallic Resists for EUV (MORE) that contain post transition metals. These post transition metal nuclei have high EUV optical density so they can utilize a high fraction of the incident photons. We will describe two technical approaches for EUV resist platforms that contain bismuth. Approach 1: Combination of organometallic compounds with photoacid generators. Approach 2: Combination of high-oxidation state metal-center oligomers that utilize carboxylate anions bound to the metal centers.

引用

页数：9

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