Current-induced switching of magnetic tunnel junctions: Effects of field-like spin-transfer torque, pinned-layer magnetization orientation, and temperature

被引：6
|
作者：
Tiwari, R. K. [1 ]
Jhon, M. H. [1 ]
Ng, N. [1 ]
Srolovitz, D. J. [2 ,3 ,4 ,5 ]
Gan, C. K. [1 ]
机构：
[1] Agcy Sci Technol & Res, Inst High Performance Comp, Singapore 138632, Singapore
[2] Univ Penn, Dept Mat Sci, Philadelphia, PA 19104 USA
[3] Univ Penn, Dept Engn, Philadelphia, PA 19104 USA
[4] Univ Penn, Dept Mech Engn, Philadelphia, PA 19104 USA
[5] Univ Penn, Dept Appl Mech, Philadelphia, PA 19104 USA
来源：
APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 02期
关键词：
D O I：
10.1063/1.4862182
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We study current-induced switching in magnetic tunnel junctions in the presence of a field-like spin-transfer torque and titled pinned-layer magnetization in the high current limit at finite temperature. We consider both the Slonczewski and field-like torques with coefficients a(J) and b(J), respectively. At finite temperatures, sigma = b(J)/a(J) = +/-1 leads to a smaller mean switching time compared that with sigma = 0. The reduction of switching time in the presence of the field-like term is due to the alignment effect (for sigma > 0) and the initial torque effect. (C) 2014 AIP Publishing LLC.
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页数：5
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