Improved trench MOS barrier Schottky rectifier by dielectric engineering

An improved trench MOS barrier Schottky (TMBS) rectifier by dielectric engineering variable K TMBS (VK-TMBS) is proposed and studied by two-dimensional numerical simulations. The device shows increasing forward current density and reduction in specific on-resistance (R-sp), as compared with a regular TMBS rectifier. VK-TMBS attains a breakdown voltage of 140 V, which is larger than that of the original TMBS. The forward voltage drop of TMBS is 0.64 V at 180 A/cm(2), and that of VK-TMBS is 0.59 V. The R-sp of VK-TMBS is 26.7% smaller than that of the TMBS. The numerical simulation results indicate that the proposed device features high performance with an improved figure of merit.