Nanoscale Optoelectronic Memory with Nonvolatile Phase-Change Photonics

被引：0
|
作者：
Youngblood, Nathan [1 ,2 ]
Farmakidis, Nikolaos [1 ]
Li, Xuan [1 ]
Bhaskaran, Harish [1 ]
机构：
[1] Univ Oxford, Dept Mat, Parks Rd, Oxford OX1 3PH, England
[2] Univ Pittsburgh, Dept Elect & Comp Engn, 3700 OHara St,Benedum Hall, Pittsburgh, PA 15261 USA
来源：
2020 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2020年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Waveguide-integrated plasmonic nanogap electrodes bridged by GST form a phase-change memory cell addressable in both the optical and electrical domains. Our hybrid memory cell reduces the footprint and switching energy by 100x and 2x respectively over prior works. (c) 2020 The Author(s)
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页数：2
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