Laser ablation of silicon induced by a femtosecond optical vortex beam

被引:50
|
作者
Nivas, Jijil J. J. [1 ,2 ]
He Shutong [1 ,3 ]
Anoop, K. K. [1 ,2 ]
Rubano, A. [1 ,2 ]
Fittipaldi, R. [4 ]
Vecchione, A. [4 ]
Paparo, D. [2 ]
Marrucci, L. [1 ,2 ]
Bruzzese, R. [1 ,2 ]
Amoruso, S. [1 ,2 ]
机构
[1] Univ Naples Federico II, Dipartimento Fis, I-80126 Naples, Italy
[2] UOS Napoli, CNR SPIN, I-80126 Naples, Italy
[3] Tianjin Univ, Coll Precis Instruments & Optoelect Engn, Key Lab Optoelect Informat Tech Sci, Ultrafast Laser Lab,Minist Educ, Tianjin 300072, Peoples R China
[4] UOS Salerno, CNR SPIN, I-84084 Fisciano, Italy
关键词
PULSES; FIELDS; FILMS;
D O I
10.1364/OL.40.004611
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We investigate laser ablation of crystalline silicon induced by a femtosecond optical vortex beam, addressing how beam properties can be obtained by analyzing the ablation crater. The morphology of the surface structures formed in the annular crater surface allows direct visualization of the beam polarization, while analysis of the crater size provides beam spot parameters. We also determine the diverse threshold fluences for the formation of various complex microstructures generated within the annular laser spot on the silicon sample. Our analysis indicates an incubation behavior of the threshold fluence as a function of the number of laser pulses, independent of the optical vortex polarization, in weak focusing conditions. (C) 2015 Optical Society of America
引用
收藏
页码:4611 / 4614
页数:4
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