Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices

被引：4

作者：

Li, Xuefei ^{[1
,2
]}

Xiong, Xiong ^{[1
,3
]}

Wu, Yanqing ^{[1
,2
,3
]}

机构：

[1] Huazhong Univ Sci & Technol, Wuhan Natl High Magnet Field Ctr, Wuhan 430074, Peoples R China

[2] Huazhong Univ Sci & Technol, Sch Elect & Elect Engn, Wuhan 430074, Peoples R China

[3] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China

来源：

CHINESE PHYSICS B | 2017年 / 26卷 / 03期

基金：

中国国家自然科学基金;

关键词：

black phosphorus; transistors; mobility; photodetector; FIELD-EFFECT TRANSISTORS; TRANSPORT-PROPERTIES; 2D SEMICONDUCTOR; GRAPHENE; PHOTODETECTORS; PASSIVATION; CIRCUITS; HETEROSTRUCTURE; PHOTOOXIDATION; GENERATION;

D O I：

10.1088/1674-1056/26/3/037307

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Recently, black phosphorus (BP) has joined the two-dimensional material family as a promising candidate for electronic and photonic applications due to its moderate bandgap, high carrier mobility, and unusual in-plane anisotropy. Here, we review recent progress in BP-based devices, such as field-effect transistors, contact resistance, quantum transport, stability, photodetector, heterostructure, and in-plane anisotropy. We also give our perspectives on future BP research directions.

引用

页数：11

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