Large Scale and Orientation-Controllable Nanotip Structures on CuInS2, Cu(In,Ga)S2, CuInSe2, and Cu(In,Ga)Se2 by Low Energy Ion Beam Bombardment Process: Growth and Characterization

被引:5
|
作者
Yen, Yu-Ting [1 ]
Wang, Yi-Chung [1 ]
Chen, Yu-Ze [1 ]
Tsai, Hung-Wei [1 ]
Hu, Fan [1 ]
Lin, Shih-Ming [1 ]
Chen, Yi-Ju [1 ]
Lai, Chih-Chung [1 ]
Liu, Wenlong [1 ]
Wang, Tsang-Hsiu [1 ]
Hong, Hwen-Fen [2 ]
Chueh, Yu-Lun [1 ]
机构
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan
[2] Inst Nucl Energy Res, Longtan Township 32546, Taoyuan County, Taiwan
关键词
sputtering etching; nano structure; ion bombardment; chalcopyrite; HIGHLY-CHARGED IONS; SURFACE-COMPOSITION; PATTERN-FORMATION; PHASE; ESCA; EVOLUTION; CRYSTAL; ARGON; FILMS; DOTS;
D O I
10.1021/am501161j
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
One-step facile methodology to create nanotip arrays on chalcopyrite materials (such as CuInS2, Cu(In,Ga)S-2, CuInSe2, and Cu(In,Ga)Se-2) via a low energy ion beam bombardment process has been demonstrated. The mechanism of formation for nanotip arrays has been proposed by sputtering yields of metals and reduction of metals induced by the ion beam bombardment process. The optical reflectance of these chalcopyrite nanotip arrays has been characterized by UV-vis spectrophotometer and the efficient light-trapping effect has been observed. Large scale (similar to 4 '') and high density (10(10) tips/cm(2)) of chalcopyrite nanotip arrays have been obtained by using low ion energy (< 1 kV), short processing duration (< 30 mm), and template-free. Besides, orientation and length of these chalcopyrite nanotip arrays are controllable. Our results can be the guide for other nanostructured materials fabrication by ion sputtering and are available for industrial production as well.
引用
收藏
页码:8327 / 8336
页数:10
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