Properties of Dy3+-doped Ge-As-Ga-Se chalcogenide glasses

被引:19
|
作者
Ren Jing [1 ]
Yang Guang [1 ]
Zeng Huidan [1 ]
Zhang Xianghua [1 ]
Yang Yunxia [1 ]
Chen Guorong [1 ]
机构
[1] E China Univ Sci & Technol, Sch Mat Sci & Engn, Key Lab Ultrafine Mat, Minist Educ, Shanghai 200237, Peoples R China
关键词
D O I
10.1111/j.1551-2916.2006.01070.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In the present work, properties of Dy3+-doped chalcogenide glasses as a stoichiometric formula of (0.9-x)GeSe2-xAsSe(3/2)-0.1GaSe(3/2) (x=0.1, 0.2, 0.3, 0.4, 0.5, 0.6) were investigated as a comparison with the previously studied Ge-Ga-Se system. Property measurements include differential thermal analysis, density, Vis-NIR and IR transmission spectra, and fluorescent emission spectra. Judd-Ofelt analysis was performed using the calculated oscillator strengths of glasses. All properties of glasses show obvious dependence on compositions. Especially, the improved devitrification resistance and the longer fluorescence life at 1.34 mu m emission were observed with the increasing As content. Noticeably, abnormal changes in some properties occurred to the glass whose average coordination number corresponds to the threshold of two-dimensional-three-dimensional topological phase transition.
引用
收藏
页码:2486 / 2491
页数:6
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