A Novel Multizone Doped and Multistep Oxide High Breakdown Voltage Lateral Bipolar Transistor on SOI

被引：3
|
作者：
Loan, Sajad A. [1 ]
Qureshi, S. [1 ]
Iyer, S. Sundar Kumar [1 ]
机构：
[1] Indian Inst Technol, Dept Elect Engn, Kanpur 208016, Uttar Pradesh, India
来源：
ICSE: 2008 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS | 2008年
关键词：
D O I：
10.1109/SMELEC.2008.4770359
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A two dimensional numerical simulation of a novel lateral bipolar junction transistor (LBJT) on silicon-on-insulator (SOI) is performed. The novelty of the device is the use of multistep doped drift region and mutistep buried oxide. The steps in doping and steps in oxide thickness have been used as a replacement for linearly varying drift doping and linearly varying oxide thickness. Numerical simulation has demonstrated that the breakdown voltage of the proposed device with two zone step doped (TZSD) drift region is similar to 158% higher than the conventional device.
引用
收藏
页码：441 / 444
页数：4
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